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NCEP026N10

Active

N-Channel MOSFET 100V 200A ultra-low RDS(on) power transistor for high-current applications.
Manufacturer
NCE
Manufacturer Part #
NCEP026N10
Provider
NanoVault
NanoVault Part #
NVT-115
Datasheet
Download PDF
NCEP026N10
Quantity Discount (%) Unit Price
1 - 99 — 0,75 $
100 - 199 1.33% 0,74 $
200 - 499 2.67% 0,73 $
500 - 999 4% 0,72 $
1,000+ 9.33% 0,68 $
Bulk Order

For quantities over 1,000, please contact sales for special pricing.

Available to Order

1049In Stock

Volume Pricing ($)

Quantity Discount (%) Price
1 - 99 — 0,75 $
100 - 199 1.33% 0,74 $
200 - 499 2.67% 0,73 $
500 - 999 4% 0,72 $
1,000+ 9.33% 0,68 $
Total
$0.00
Can ship immediately from Lebanon​
Free delivery for orders above 100$
Product Specifications
Gate-Source Voltage
20V
Continuous Drain Current
260A
Pulsed Drain Current
1040A
Drain-Source Voltage
100V
Rds(on)
0.0026mOhm
Turn-on Delay
10nS
Turn-off Delay
35nS

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