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NCEP026N10

Active

N-Channel MOSFET 100V 200A ultra-low RDS(on) power transistor for high-current applications.
Manufacturer
NCE
Manufacturer Part #
NCEP026N10
Provider
NanoVault
NanoVault Part #
NVT-115
Datasheet
Download PDF
NCEP026N10
Quantity Discount (%) Unit Price
1 - 99 — 0,75 $
100 - 199 4.51 % 0,72 $
200 - 499 7.16 % 0,70 $
500 - 999 13.79 % 0,65 $
1,000+ 17.77 % 0,62 $
Bulk Order

For quantities over 1,000, please contact sales for special pricing.

Available to Order

2500In Stock

Total
$0.00
Can ship immediately from Lebanon​
Free delivery for orders above 100$
Product Specifications
Gate-Source Voltage
20V
Continuous Drain Current
260A
Pulsed Drain Current
1040A
Drain-Source Voltage
100V
Rds(on)
0.0026mOhm
Turn-on Delay
10nS
Turn-off Delay
35nS

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